Nitride Based Tunneling Electronics, Paul R. Berger
Advisor: Paul R. Berger
Dr. Tyler Growden
Ms. Parastou Fakhimi (ECE Ph.D. candidate)
David Storm (Naval Research Laboratory)
David Meyer (Naval Research Laboratory)
Richard Molnar (MIT Lincoln Laboratory)
Jeffrey Daulton (MIT Lincoln Laboratory)
Elliot Brown (Wright State University)
Patrick J. Fay (University of Notre Dame)
Former Graduate Students:
Tyler Growden (2016)
Importance of the Problem:
Thin vertical devices using III-nitrides have been met with a myriad of materials science challenges, but mastering this family will open new vistas of novel vertical nitride devices using thin heterobarriers.
Brief Description of Our Work and Results:
AlN/GaN resonant tunneling diodes (RTD) grown on low dislocation density semi-insulating (SI) bulk GaN substrates via
plasma-assisted molecular-beam epitaxy (MBE) are reported. The devices were fabricated using a six mask level,
fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire
sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than
1000 continuous up-and-down voltage sweeps. The sample exhibited a ~90% yield of operational devices which routinely
displayed an average peak current density of 2.7 kA/cm2 and peak-to-valley current ratio (PVCR) of ~1.15 across different sizes.
Awards and Citations
- ONR MURI "DATE" ($5.0M, 2011-2016).
- "Single Layer Double Barrier Polarization Induced Resonant Tunneling Diode,"
Paul R. Berger and Tyler A. Growden [Disclosure submitted March 11, 2014].
Provisional Filed May 2, 2014 [Application Number 61/987,876].
- "Polarization Induced Nitride Barrier Tunnel Diodes," Paul R. Berger and Tyler A. Growden,
[Disclosure submitted October 10, 2013; Provisional filed July 10, 2014,
Application Number 62/022,876].
- "AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on
freestanding GaN," D.F. Storm, T.A. Growden, D.S. Katzer, M.T. Hardy, W. Zhang, E.R. Brown, P.R. Berger,
and D.J. Meyer, Journal of Vacuum Science and Technology B, vol. 35, No. 2 pp.
02B110-1 to 02B110-4, http://dx.doi.org/10.1116/1.4977779 (March/April 2017).
- "A Nonlinear Circuit Model for Switching Process in Quantum Well Devices," W-D. Zhang, E.R. Brown,
T.A. Growden, P.R. Berger, R. Droopad, IEEE Transactions on Electron Devices, vol. 63,
No. 12, Pages: 4993 - 4997, https://doi.org/10.1109/TED.2016.2617681 (December 2016).
- "Highly repeatable room temperature negative differential resistance in AlN/GaN resonant
tunneling diodes grown by molecular beam epitaxy," Tyler A. Growden, David F. Storm, Weidong Zhang,
Elliott R. Brown, David J. Meyer, Parastou Fakhimi, and Paul R. Berger, Applied Physics Letters,
109, 083504 http://dx.doi.org/10.1063/1.4961442 (August 2016).
- "Methods for Obtaining High Interband Tunneling Current in III-Nitrides,"
Tyler A. Growden, Sriram Krishnamoorthy, Digbijoy N. Nath, Anisha Ramesh, Siddharth Rajan,
and Paul R. Berger, IEEE DRC Digest, pp. 163-164 (2012).
This website uses Adobe AcrobatTM
technology; download free Acrobat products
Netscape Navigator is recommended
for use with this website; download
Last updated August 29, 2017.
Paul R. Berger's Research page
Send suggestions or comments to