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Fundamentals of Semiconductor Devices 2nd Edition
PART I: MATERIALS
Chapter 1: Electron Energy and States in Semiconductors
Chapter 2: Homogeneneous Semiconductors
Chapter 3: Current Flow in Homogeneous
Chapter 4: Nonhomogeneous Semiconductors
Supplement to Part I: Introduction to Quantum Mechanics
PART II: DIODES
Chapter 5: Prototype pn Homojunctions
Chapter 6: Additional Considerations for Diodes
Supplement to Part II: Diodes
PART III: FIELD-EFFECT TRANSISTORS
Chapter 7: The MOSFET
Chapter 8: The MOSFET
PART IV: Bipolar Junction Transistors
Chapter 9: Bipolar Junction Transistors: Statics
Supplement to Part III: Additional Considerations for MOSFETs
Chapter 10: Time-Dependent Analysis of BJTs
Supplement to Part IV: Bipolar Devices
PART V: Optoelectronic and Power SEmiconductor Devices
Chapter 11: Optoelectronic Devices
Chapter 12: Power Semiconductor Devices
PART 1: MATERIALS
Chapter 1: Electron Energy and States in Semiconductors
1.1 Introduction and Preview
1.2 A Brief History
1.3 Application to the Hydrogen Atom
1.3.1. The Bohr Model for the Hydrogen Atom (Part A)
( Part B)
1.3.2. Application to Molecules: Covalent Bonding
1.3.3. Quantum Numbers and the Pauli Exclusion Primciple
1.3.4. Covalent Bonding in Crystalline Solids
1.4. Wave-Particle Duality
1.5 The Wave Function
1.6 The Electron Wave Function Intrduction
1.6.1 The Free Electron in One Dimension
1.6.2 The de Broglie Relationship
1.6.3 1.6.3 The Free Electron in Three Dimensions
1.6.4 The Quasi-Free Electron Model (Part A)
(Part B)
1.6.5 Reflection and Tunneling
1.7 A First Look at Optical Emission and Absorption
1.8 Crystal Structures, Planes, and Directions
1.9 Summary
Chapter 2: Homogeneous Semiconductors
2.1 Introduction and Preview
2.2 Pseudo-Classical Mechanics for Electrons
2.2.1 One-Dimensional Crystals (Part A)
(Part B)
2.2.2 Three-Dimensional Crystals
2.3 Conduction Band Structure
2.4 Valence Band Structure
2.5 Intrinsic Semiconductors
2.6 Extrinsic Semiconductors
2.6.1 Donors
2.6.2 Acceptors
2.7 The Concept of Holes
2.8 Effective Mass of Electrons and Holes
2.9 Density-of-States Functions for Electrons in Bands
2.10 Fermi-Dirac Statistics
2.11 Electron and Hole Distributions with Energy (Part A)
(Part B)
2.12 Temperature Dependence of Carrier Concentrations in Nondegenerate Semiconductors
2.12.1 Carrier Concentrations at High Temperatures
2.12.2 Carrier Concentrations at Low Temperatures (CarrierFreeze-Out)
2.13 2.13 Degenerate Semiconductors
2.13.1 Impurity-Induced Band-Gap Narrowing
2.13.2 Apparent Band-Gap Narrowing
2.14 Summary
Chapter 3: Current Flow in Homogeneous emiconductors
3.1 Introduction and 3.2 Drift Current
3.3 Carrier Mobility
3.3.1 Carrier Scattering
3.3.2 Scattering Mobility
3.3.3 Impurity Band Mobility
3.3.4 Temperature Dependence of Mobility
3.3.5 High-Field Effects
3.4 Diffusion Current
3.5 Carrier Generation and Recombination
3.6 Optical Processes in Semiconductors
3.6.1 Absorption
3.6.2 Emission
3.7 Continuity Equations
3.8 Minority Carrier Lifetime
3.8.1 Rise Time
3.8.2 Fall Time
3.9 Minority Carrier Diffusion Lengths
3.10 Quasi Fermi Levels
3.11 Summary
Chapter 4: Nonhomogeneous Semiconductors
4.1 Constancy of the Fermi Level at Equilibrium
4.2 Graded Doping (Part A)
(Part B)
4.3 Nonuniform Composition
4.4 Graded Doping and Nonuniform Composition Combined
4.5 Summary
Supplement to Part I: Introduction to Quantum Mechanics
S1.1 Introduction
S1.2 The Wave Function
S1.3 Probabiity and the Wave Function
S1.3.1 Particle in a One-Dimensional Potential Well
S1.4 Schrödinger's Equation
S1.5 Applying Schrödinger's Equation
S1.6 Some Resuts from Quantum Mechanics
S1.6.1 The Free Electron
S1.6.2 The Quasi-Free Electron
S1.6.3 The Potential Energy Well
S1.6.4 The Infinite Potential Well in One Dimension
S1.6.5 Reflection and Transmission at Finite Potential Barrier
S1.6.6 Tunneling Part A
(Part B)
(Part C)
(Part D)
S1.6.7 The Finite Potential Well
S1.6.8 The Hydrogen Atom Revisited
S1.6.9 The Uncertainty Principle
S1.7 Phonons (introduction)
S1.7.1 Carrier Scattering by Photons
S1.7.2 Indirect Electron Transitions
S1.8 Summary
PART II: DIODES
Chapter 5: Prototype pn Homojunctions
5.1 Introduction
5.2 Prototype pn Junctions (Qualitative)
5.2.1 Energy band Diagrams of Prototype pn Junctions (Part A)
(Part B)
5.2.2 Description of Current Flow in a pn Prototype Homojunction
5.2.3 Tunnel Diodes
5.3 Prototype pn Homojunctions (Quantitative)
5.3.1 Energy band Diagram at Equilibrium (Step Junction)
5.3.2 Eenergy Band Diagram with Applied Voltage (Part A)
(Part B)
5.3.3 Current=Voltage Characteristics of pn Homojunctions (Part A)
(Part B)
(Part C)
(Part D)
(Part E)
(Part F)
5.3.4 Reverse-bias Breakdown
5.4 Small-Signal Impedance of Prototype Homojunctions
5.4.1 Junction (Differential) Resistance
5.4.2 Junction (Differential) Capacitance
5.4.3 Stored-Charge Capacitance
5.5 Transient Effects
5.5.1 Turn-Off Transient
5.5.2 Turn-On Transient
5.6 Effects of Temperature
5.7 Summary
Chapter 6: Additonal Considerations for Diodes
6.1 Introduction
6.2 Non-Step Homojunctions (intro combined with 6.1)
6.2.1 Linearly Graded Junctions)
6.2.2 Hyperabrupt Junctions
6.3 Semiconductor Heterojunctions
6.3.1 The Energy Band Diagrams of Semiconductor-Semiconductor Heterojunctions
6.3.2 Tunneling-Induced Dipoles
6.3.3 Effects of Interface States
6.3.4 Effects of Lattice Mismatch on Heterojunctions
6.4 Metal-Semiconductor Junctions
6.4.1 Ideal Metal-Semiconductor Jucntions (Electron Affinity Model)
6.4.2 Influence of Interface-Induced Dipoles (Combined with 6.4.1)
6.4.3 The Current-Voltage Characteristics of Metal-Semicnductor Junctions
6.4.4 Ohmic (Low-Resistance) Contacts
6.4.5
I-Va
Characteristics of Heterojunctions Diodes
6.5 Capacitance in Nonideal Junctions and Heterojunctions
6.6 Summary
Supplement to Part II: Diodes
S2.1 Introduction
S2.2 Dielectric Relaxation Time
S2.2.1 Dielectric Relaxation Time for Majority Carriers
S2.2.2 Dielectric Relaxation Time for Minority Carriers
S2.3 Junction Capacitance
S2.3.1 Junction Capacitance in a Prototype (Step) Junction
S2.3.2 Junction Capacitance in a Nonuniformly Doped Junction
S2.3.3 Varactors
S2.3.4 Stored Charge Capacitance of Short-Base Diodes
S2.4 Second Order Effects in Schottky Diodes
S2.4.1 Tunneling through Schottky Barriers
S2.4.2 Barrier Lowering in Schottky Barriers due to the Image Effect
S2.5 Summary
PART III: Field-Effect Transistors
Introduction (Part 1)
(Part 2)
(Part 3)
(Part 4)
Chapter 7: The MOSFET
7.1 Introduction
7.2 MOSFETS (Qualitative)
7.2.1 The MOS Capacitor
7.2.2 MOS Capacitor Hybrid Diagrams
7.2.3 MOSFETs at Equi8ibrium (Qualitative)
7.2.4 MOSFETs Not at Equilibrium (Part A)
(Part B: Enhancement and Depletion MOSFETs)
(Part C: More about Threshold)
(Part D:
VDS
is not 0)
7.3 Drift Model for MOSFETs (Quantitative)
7.3.1 Long Channel Drift MOSFET Model with Constant Channel Mobility (Part A: Channel Charge)
(Part B: Constant Mobility)
(Part C: Saturation Current Revisited)
(Part D: Channel Length Modulation)
7.3.2 More Realistic Long-Channel Models: Effects of Fields on Mobiity (Part A: Effect of Transverse Field)
(Part B: Effect of Transvers Field Continued Field)
(Part C: Effect of Longitudinal Field)
7.3.3 Series Resistance
7.4 Comparison of Models with Experiment
7.5 Ballistic Model
7.6 Some Short-Channel Effects
7.6.1 Dependence of the effective Channel Length on
VDS
7.6.2 Dependence of Threshold on the Drain Voltage
7.7 Subthreshold Leakage Current
7.8 Summary
Chapter 8: Other Field Effect Transistors
8.1 Introduction
8.2 Measurement of Mobility and Threshold Voltage
Part A
Part B
8.3 Complementary MOSFETs (CMOS)
8.3.1. The CMOS Inverter
8.3.2 Matching of CMOS Devices
8.4 Switching in CMOS Circuits Carrier Generation and Recombination
8.4.1. Effect of Load Capacitance
8.4.2 Propagation (Gate) Delay in CMOS Switching Circuits
8.4.4 Pass-Through Current in CMOS Devices
8.5 Other MOSFETS
8.5.1 Part A Partially Depleted SOI
8.5.1 Part B Fully Depleted SOI MOSFET
8.5.1 Part C Asymmetric Double-Gate SOI
8.5.1 Part D Symmetric Dual-Gate Fully Depleted SOI MODSFET
8.5.1 Part E Subthreshold Swing in Double-Gate Fully Depleted SOI
8.5.2 FinFETs
8.5.3 Nonvolatile FETs
8.6. Other FETs
8.6.1 HFETs Part A
Part B
Part C
8.6.2 MESFETs
8.6.3 JFETs
8.6.4 TFETs
8.7 Bulk Channel FETs: Quantitative Part A
Part B
8.8 Summary
Supplement to Part III: Additional Considerations for MOSFETs
S3.1 Introduction
S3.2 Dependence of Channel Charge on Longitudinal Field
S3.3 Threshold Voltage for MOSFETs Introduction
S3.3.1 Fixed Charge
S3.3.2 Interface Trapped Charge
S3.3.3 Bulk Charge
S3.3.4 Effect of Charge on the Threshold Voltage
S3.3.5 Flatband Voltage
S3.3.6 Threshold Votlage Control
S3.3.7 Channel Quantum Effects
S3.4 MOSFET Analog Equivalent Circuits Introduction
S3.4.1 Small Signal Equivalent Circuits (Part A)
(Part B)
S3.4.2 CMOS Amplifiers
S3.5 Unity Current Gain Cutoff Frequency
f
T
S3.6 MOS Capacitors
S3.6.1 Ideal MOS Capacitance
S3.6.2 The C-V Characteristics of Real MOS Capacitors
S3.6.3 MOSFET Parameter Analysis from C-V Measurements
S3.7 Dynamic Read-Only Memory
S3.8 MOSFET Scaling
S3.9 Device and Interconnect Degradation
S3.9.1 MOSFET Integrated Ciruit Reliability
S3.10 Summary
PART IV: Bipolar Junction Transistors
Introduction (Part A)
(Part B
Chapter 9: Bipolar Transistors: Statics
9.1 Introduction Part A
Part A
9.2 Output Characteristics (Qualitative)
9.3 Current Gain
9.4 Model of a Prototype BJT (Intoduction)
9.4.1.Collection Efficiency
M
9.4.2 Injection Efficiency gamma
9.4.3 Base Transport Efficiency (Part A Derivation)
(Part B Example)
(Part C Another example)
(Part D A third example)
9.5 Doping Gradients in BJTs: Introduction
9.5.1 The Graded-Base Transistor Part A
Part B
9.5.2 Efect of Base Field on beta
9.6 Heterojunctino Transistors Introduction
9.6.1 Uniformly Doped HBT
9.6.2 Graded Composition HBT: (Se: SeGe-Base HBT)
9.6.3 Double-Heretojunction BJT
9.7 Comparison of Si-Base, SiGe-Base, and GaAs-Base BJTs
9.8 The Basic Ebers-Moll dc Model Part A
Part B
9.9 Summary
Chapter 10: Time-Dependent Analysis of BJTs
10.1 Introduction
10.2 Ebers-Moll Model
10.3 Small-Signal Models (Introduction)
10.3.1 Hybrid Pi Model (Part A)
(Part B)
(Part C)
10.4 Stored-Charge Capacitance
10.5 Frequency Response (Introduction)
10.5.1 Unity Gain Frequency
f
T
10.5.2 Base Transit Time
t
T
10.5.3 Base-Collector Transit Time
t
BC
10.5.4 Maximum Oscillation Frequency
f
max
10.6. High-Frequency Transistors
10.6.1 Double-Poly Self-Aligned Transistor
10.7 BJT Switching Times (Introduction)
10.7.1 Output Low-to-High TransitionTime
10.7.2 Schottky-Clamped Transistor
10.7.3 Double Heterostructure Bipolar Junction Transistors (HBTs)
10.8 BJTs, MOSFETs, and BiMOS
10.8.1 Comparison of BJTs and MOSFETs
10.8.2 BiMOS
10.9 Summary
Supplement to Part IV: Bipolar Devices
S4.1 Introduction
S4.2 Current Crowding and Base Resistance
S4.3 Base Width Modulation (Early Effect)
S4.4 Avalanche Breakdown
S4.5 High Injection
S4.6 Base Push-Out (Kirk) Effect
S4.7 Recombination in the Emitter-Base Junction
S4.8 Offset Voltage in BJTs
S4.9 Lateral Base Transistors
S4.10 Summary
Part V: Optoelectronic and Power Devices
Introduction to Part V
Chapter 11: Optoelectronic Devices
11.1 Introduction
11.2 Photodetectors
11.2.1 Generic Photodioce (Part A)
(Part B)
(Part C)
11.2.2 Solar Cells (Part A)
(Part B)
11.2.3 The PIN Photodector
11.2.4 Avalanche Photodiodes
11.3 Light-Emitting Diodes
11.3.1 Spontaneous Emission in a Forward-Biased Junction
11.3.2 Blue, Ultraviolet, and White LEDs
11.3.3 IR LEDs (Part A)
(Part B)
11.3.4 White LEDs and Solid-State Lighting
11.4 Laser Diodes (Introduction)
11.4.1 Optical Gain
11.4.2 Optical Feedback
11.4.3 Gain + Feedback = Laser
11.4.4 Laser Structures
11.4.5 Other Laser Materials
11.5 Image Sensors (Introduction
11.5.1 Charge-Coupled Devices (CCDs)
11.5.2 Linear Image Sensors
11.5.3 Area Image Sensors
11.6 Summary
Chapter 12: Power Devices
12.1 Introduction and Preview
12.2 Rectifying Diodes
12.2.1 Junction Breadown (Part A)
(Part B)
(Part C)
(Part D)
(Part E)
12.2.2 Specific On Resistance (Part A)
(Part B)
(Part C)
(Part D)
12.2.3 Transient Losses (Part A)
(Part B)
12.2.4 Merged Schottky-PIN Diodes
12.3 Thyristors (npnp Switching Devices)
12.3.1 The Four-Layer diode Switch)
12.3.2 The Two-Transistor Model of an npnp Switch
12.3.3 The Silicon-Controllled Rectifier
12.3.4 TRIAC
12.3.5 Gate Turn-Off Thyristor
12.4 The Power MOSFET
12.5 The IGBT
12.6 Power MOSFET versus IGBT
12.7 Summary