High-Speed and Microwave Semiconductor Devices

Class Webpage Link for OSU students
The username and password will be provided by your instructor in class.

Offered: 2012 Winter quarter
Instructor: Patrick Roblin
Prerequisite: ECE 730 or equivalent or permission of the instructor (ECE 432 or equivalent is sufficient).
Lecture Schedule: MWF: 12:30 am
Location: KN 195 (Knowlton Architecture building)
Call Number: 26345
Course Topics:
This course covers the principles underlying the operation and application of microwave semiconductor devices such as the resonant tunneling diode, Gunn diodes, HBT and MODFETs, SOI and LDMOSFETs. Topics covered includes the theory of heterostructure devices, electron transport in high fields, Gunn effect, resonant tunneling and superlattices, modulation doped FET devices, short channel effects, FET wave-equation and small and large signal models for microwave circuit simulations.
EE832 Syllabus: Download PDF

2012 Special Topics:

Modeling and Measurement of Transistors for both RFIC and high-power RF PA : GaN HEMTs: physics, modeling and high-power density RF applications Non-linear RF characterization with a Large Signal Network Analyzer Impact of self-heating & traps on transistor chararacteristics Pulsed-IV and pulsed-RF measurements as a probe of device physics Joint LSNA & DLOS measurements of GaN HEMTs On-wafer RF measurements and deembedding; Cold FET parasitics extraction 1/f noise and cyclostationary effect under large-signal operation

See also: Microwave and RF Curriculum

Other Links:

Interactive Java applets on semiconductor devices in the Web: click here.

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Patrick Roblin (roblin@ee.eng.ohio-state.edu), December. 2012