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High-Speed and Microwave Semiconductor Devices
ECE 7831
The username and password will be provided by your instructor in class.
Overview
Offered: 2020 Fall quarterInstructor: Patrick Roblin
Prerequisite: ECE 5530 (730) or equivalent or permission of the instructor (ECE 3030 or equivalent is sufficient for motivated students).
Lecture Schedule: TR: 12:45 pm - 2:05 pm
Location: Baker System 272
Call Number:
Course Topics:
This course covers the principles underlying the operation and application of microwave semiconductor devices such as the resonant tunneling diode, Gunn diodes, HBT and MODFETs, SOI and LDMOSFETs. Topics covered includes the theory of heterostructure devices, electron transport in high fields, Gunn effect, resonant tunneling and superlattices, modulation doped FET devices, short channel effects, FET wave-equation and small and large signal models for microwave circuit simulations.
EE7831 Syllabus: Download PDF
2020 Special Topics
Modeling and Measurement of Transistors for RF Power Amplifier :- GaN HEMTs: physics, modeling and high-power density RF applications
- Non-linear RF characterization with a Large Signal Network Analyzer (NVNA)
- Impact of self-heating & traps on transistor chararacteristics
- Pulsed-IV and pulsed-RF measurements as a probe of device physics
- Joint LSNA & DLOS measurements of GaN HEMTs
- On-wafer RF measurements and deembedding; Cold FET parasitics extraction
- Trapping, 1/f noise and cyclostationary effects under large-signal RF operation
Links
Controlling Photons in a Box and Exploring the Quantum to Classical Boundary
Superposition, Entanglement, and Raising Schroedinger's Cat
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