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Current
RF/Microwave and Device Research
Project
Non-Quasi-Static Large-Signal SOI-MOSFET models
Large-signal electro-thermal microwave models for
FETs SOI-MOSFETs and HEMTs were developed (Allied Signal)
).
Theses models are non-quasi-static, charge-conserving
electro-thermal large-signal FET models .
These FET models account for self-biasing (parasitic bipolar
transistor and IV kink) and self-heating.
A table representation using B-Spline is used for its speed
and uniqueness of extraction.
(Siraj Akhtar, Patrick Roblin)
Figure 1 compares the measured on (PISCES) and fitted
isothermal DC I-V characteristics.
Figure 2 compares the measured on (PISCES) and predicted transient I-V characteristics.
Figures 3-5 compare the measured and predicted power gain and output power
fondamental, first and second harmonics,
and the power added efficiency all versus input power.
Figure 6 shows the temperature measured versus predicted
temperature.
Patrick Roblin (roblin@ee.eng.ohio-state.edu)