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Current
RF/Microwave and Device Research
Project
Electro-Thermal LDMOSFET Model for RF Power Amplifier Design
In several projects supported by Lucent Technologies and Agere Systems
we have developed both analytic and table based large-signal
electrothermal models for RF power LDMOSFET.
The extraction of the model parameters relied
on measured isothermal DC characteristic and S-parameters of
arbitrary power MOSFETs at various device temperatures
and pulsed IV data.
The accuracy of the large-signal models was verified with
the design power RF amplifiers.
(Siraj Akhtar, Wenhua Dai, Sunyoung Lee, Sukkeun Myoung, Patrick Roblin)
For more info
see our ARFTG Dec 2003 talk: PPT
Temperature distribution of LDMOSFET RF power transistor.
Patrick Roblin (roblin@ee.eng.ohio-state.edu)