Our research focuses on epitaxial growth of wide bandgap semiconductors (III-Nitrides) using the technique of molecular beam epitaxy (MBE) to Engineer optical, electronic, and magnetic properties at nanometer length scales. We are developing quantum structures with applications in high efficiency lighting, lasers, telecommunications, optical storage, magnetic semiconductors and spintronics. MBE is used to produce both planar and nanowire heterostructures with electronic, polarization, and magnetic doping. Our optical characterization laboratory allows optical absorption and luminescence spectroscopy from ultraviolet to infrared wavelengths and from ambient to cryogenic temperature.

Recent Publications