DEPARTMENT OF ELECTRICAL ENGINEERING The Ohio State University Course Syllabus |
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EE 331 |
Introduction to Materials for Electrical Engineering |
Spring 2001 |
Prerequisites: |
Chemistry 125, Math 415, Physics 133; a minimum cumulative grade point average of 2.00; and acceptance as an engineering major or written permission of the Electrical Engineering department. |
Course Objectives: |
In almost every case, the work of engineers finds application through materials. For example, developments in the understanding of the structure of materials and the engineering of their properties directly led to solid state devices and the resulting revolutionary growth in all aspects of electrical engineering. The primary purpose of this course is to provide an introduction to the interrelation of the structure, properties and processing of materials, with emphasis on the first two. While the course covers a broad range of materials and properties, special treatment is given to those of particular interest for electrical engineers. |
1) Students learn about the fundamentals of structural materials. |
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2) Students learn the fundamentals of quantum mechanics. |
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3) Students apply these results to the understanding of the electronic properties of semiconductors. |
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Texts: |
"Materials Science and Engineering, an Introduction, 5th edition," W. D. Callister, Wiley, 2000. |
"Solid State Electronic Devices, 5th edition," B. G. Streetman & S. Banerjee, Prentice Hall, 2000. |
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Instructor: |
Prof. Paul R. Berger, 209CL, 247-6235, http://eewww.eng.ohio-state.edu/~berger/E-mail: "berger" within the EE computer network ("pberger@ieee.org" from elsewhere) |
Instructor Office Hours: |
MWF between 1-5 PM (209 Caldwell). |
TA: |
Ms. Yifan Xu, 263CL, 247-6745, http://eewww.eng.ohio-state.edu/~xuy/Email: "xuy" within the EE computer network ("xuy@ee.eng.ohio-state.edu: from elsewhere). |
TA Office Hours: |
Tuesday and Thursday, 10:30AM-12:00PM (263 Caldwell). |
Class Time/Place: |
MWF 11:30-12:18 PM in 100 Ives Hall |
Final Exam: |
Wednesday June 6th, 11:30-1:18 PM |
COURSE OUTLINE (NOTE: S = Text by Streetman, C = Text by Callister)
Date |
# |
Topics |
Reading |
Assignment |
Mar. 26 |
1 |
Introduction |
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Mar. 28 |
2 |
Atomic structure, periodic table, atomic bonding |
C 1-27, |
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Mar. 30 |
3 |
Crystal structure |
C 30-40, S 1-6 |
#1 Callister 2.1, 2.4, 2.7, 2.14, 2.17 |
April 2 |
4 |
Crystallographic directions, and planes, diamond crystal structure |
C 40-51, S 7-12, |
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April 4 |
5 |
Amorphous, polycrystalline and non-crystalline solids, point defects, then |
C 51-53, C 58-59, C 66-74 |
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April 6 |
6 |
Dislocations, interfacial defects, microscopy |
C 74-88 |
#2 Callister 2.20, 2.21, 3.3, 3.4, 3.6 |
April 9 |
7 |
Quantum mechanics: wave-particle duality, uncertainty principle, Schrodinger's equation, free particle, particle in a box |
S 28-42 |
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Apr. 11 |
8 |
Particle in a box, step potential, tunneling, Wave eqn. applied to atoms |
S 42-43 |
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Apr. 13 |
9 |
Wave eqn. applied to crystals, energy bands, Kronig-Penney model |
S 43-61 |
#3 Callister 3.9, 4.1, 4.5, 4.19, 4.26 |
Apr. 16 |
10 |
E-k band diagrams, metals, semiconductors, insulators, direct and indirect bandgap semiconductors, electronic conduction |
S 61-70 |
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Apr. 18 |
11 |
EXAM I (Lectures 1-10) Delayed till Monday April 23rd |
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Apr. 20 |
12 |
Effective mass, electrons and holes |
S 70-74 |
#4 Streetm. 1.17, 2.6, 2.11 |
Apr. 23 |
13 |
Energy bands of Si and GaAs, density of states |
S Appendix IV |
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Apr. 25 |
14 |
Intrinsic and extrinsic semiconductors, electron and hole concentration, Fermi level |
S 74-90 |
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Apr. 27 |
15 |
Carrier concentrations, space charge neutrality, Resistivity and conductivity, drift current mobility, Fermi level |
S 90-104 |
#5 |
Apr. 30 |
16 |
Introduction to excess carriers |
S 108-124 |
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May 2 |
17 |
Diffusion, semiconductor crystal growth, |
C 92-107, S 12-25 |
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May 4 |
18 |
Oxidation |
Notes |
#6 |
May 7 |
19 |
Mechanical properties of metals, stress and strain, plastic deformation |
C 112-134 |
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May 9 |
20 |
EXAM II (Lectures 12-19) |
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May 11 |
21 |
Hardness, safety factors, dislocations and plastic deformation |
C 134-145, C 153-165 |
#7 |
May 14 |
22 |
Strengthening, hardening, recrystallization, |
C 166-179 |
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May 16 |
23 |
Fracture, Fatigue, creep |
C 184-190 C 203-232 |
#8 |
May 18 |
24 |
Phase diagrams: binary isomorphous, lever rule |
C 241-255 |
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May 21 |
25 |
Binary eutectic phase diagrams |
C 255-267 |
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May 23 |
26 |
Intermediate phases, compounds, eutectoid, peritectic, congruent transformations, Gibb's phase rule |
C 267-274 |
#9 |
May 25 |
27 |
Introduction to ceramics, thermal properties |
C 381-403 C 658-670 |
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May 28 |
Memorial Day Holiday |
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May 30 |
28 |
Introduction to magnetic and optical properties |
C 675-731 |
#10 |
June 1 |
29 |
Catchup/Review/Evaluations |
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June 6 |
FINAL EXAM (Lectures 1-30) 11:30-1:18 PM |
GRADING POLICY
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1. |
Grades will first be computed according to the following percentages. |
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Computer Problem |
10% |
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Homework |
20% |
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Exam I |
20% |
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Exam II |
20% |
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Final Exam |
30% |
Homework Policy: Homework will be due once a week. Solutions will be discussed in the lecture (time permitting) after the homework is collected. Late homework will be accepted up to two weeks after the class in which it is due or up to the last day of classes whichever is earlier. Homework will count 20% of your final grade. Penalty will be 33% for each week late. Penalty for one week late takes effect immediately following class in which it is due. After two weeks NO credit will be given.
Examinations: There will be two one-hour exams and a final exam. They will count 20%, 20% and 30% of your final grade, respectively. For each hourly exam you are permitted one "cheat sheet" comprised of an 8½ ´ 11 sheet of paper which must be handwritten. For the final exam, you are permitted two "cheat sheets."
Honor System: This course is conducted in accordance with the Department of Electrical Engineering Honor System. The EE Honors System applies to students enrolled in EE courses. Copies of the EE Honor System are available in the EE Main Office, 205 Dreese.