DEPARTMENT OF ELECTRICAL ENGINEERING

The Ohio State University

Course Syllabus

  

EE 331

Introduction to Materials for Electrical Engineering

Autumn 2000

Prerequisites:

Chemistry 125, Math 415, Physics 133; a minimum cumulative grade point average of 2.00; and acceptance as an engineering major or written permission of the Electrical Engineering department.

Course Objectives:

In almost every case, the work of engineers finds application through materials. For example, developments in the understanding of the structure of materials and the engineering of their properties directly led to solid state devices and the resulting revolutionary growth in all aspects of electrical engineering. The primary purpose of this course is to provide an introduction to the interrelation of the structure, properties and processing of materials, with emphasis on the first two. While the course covers a broad range of materials and properties, special treatment is given to those of particular interest for electrical engineers.
 

1) Students learn about the fundamentals of structural materials.
 

2) Students learn the fundamentals of quantum mechanics.
 

3) Students apply these results to the understanding of the electronic properties of semiconductors.

Texts:

"Materials Science and Engineering, an Introduction, 5th edition," W. D. Callister, Wiley, 2000.
 

"Solid State Electronic Devices, 5th edition," B. G. Streetman & S. Banerjee, Prentice Hall, 2000.

Instructor:

Prof. Paul R. Berger, 209CL, 247-6235, http://eewww.eng.ohio-state.edu/~berger/

E-mail: "berger" from the EE computing labs ("pberger@ieee.org" from elsewhere)

TA:

Hyung Joon Kim, kim.457@osu.edu

http://eewww.eng.ohio-state.edu/~kimh

Time/Place:

MWF 3:30-4:18 PM in 031 Hitchcock (Note: recently moved from 120 Caldwell)

Office Hours:

MWF after class in my office (209 Caldwell).

Final Exam:

Monday December 4th, 3:30 – 5:18 PM.

COURSE OUTLINE (NOTE: S = Text by Streetman, C = Text by Callister)

Date

#

Topics

Reading

Assignment

Sept. 20

1

Introduction

    

Sept. 22

2

Atomic structure, periodic table, atomic bonding

C 1-27,

 

Sept. 25

3

Crystal structure

C 30-40, S 1-6

#1

Sept. 27

4

Crystallographic directions, and planes, diamond crystal structure

C 40-51, S 7-12,

 

Sept. 29

5

Amorphous, polycrystalline and non-crystalline solids, point defects, then

C 51-53, C 58-59, C 66-74

  

Oct. 2

6

Dislocations, interfacial defects, microscopy

C 74-88

#2

Oct. 4

7

Diffusion, semiconductor crystal growth,

C 92-107, S 12-25

  

Oct. 6

8

Quantum mechanics: wave-particle duality, uncertainty principle, Schrodinger's equation, free particle, particle in a box

S 28-42

  

Oct. 9

9

Particle in a box, step potential, tunneling, Wave eqn. applied to atoms

S 42-43

#3

Oct. 11

10

Wave equation applied to crystals, energy bands, Kronig-Penney model

S 43-52

  

Oct. 13

11

EXAM I (Lectures 1-10)

S 55-61

  

Oct. 16

12

E-k band diagrams, metals, semiconductors, insulators, direct and indirect bandgap semiconductors, electronic conduction

S 61-70

#4

Oct. 18

13

Effective mass, electrons and holes

S 70-74

  

Oct. 20

14

Energy bands of Si and GaAs, density of states

S Appendix IV

  

Oct. 23

15

Intrinsic and extrinsic semiconductors, electron and hole concentration, Fermi level

S 74-90

#5

Oct. 25

16

Carrier concentrations, space charge neutrality, Resistivity and conductivity, drift current mobility, Fermi level

S 90-104

  

Oct. 27

17

Introduction to excess carriers

S 108-124

  

Oct. 30

18

Mechanical properties of metals, stress and strain, plastic deformation

C 112-134

#6

Nov. 1

19

Hardness, safety factors, dislocations and plastic deformation

C 134-145, C 153-165

  

Nov. 3

20

EXAM II (Lectures 12-19)

    

Nov. 6

21

Strengthening, hardening, recrystallization,

C 166-179

#7

Nov. 8

22

Fracture, Fatigue, creep

C 184-190

C 203-232

  

Nov. 10

  

University Holiday

    

Nov. 13

23

Phase diagrams: binary isomorphous, lever rule

C 241-255

#8

Nov. 15

24

Binary eutectic phase diagrams

C 255-267

  

Nov. 17

25

Intermediate phases, compounds, eutectoid, peritectic, congruent transformations, Gibb's phase rule

C 267-274

  

Nov. 20

26

Introduction to ceramics

C 381-403

#9

Nov. 22

27

Introduction to thermal properties

C 658-670

  

Nov. 24

  

Thanksgiving Holiday

    

Nov. 27

28

Introduction to magnetic properties

C 675-703

#10

Nov. 29

29

Introduction to optical properties

C 707-731

  

Dec. 1

30

Catchup/Review/Evaluations

    

Dec. 4

  

FINAL EXAM (Lectures 1-30) 3:30 – 5:18 PM

    

GRADING POLICY:

1.

Grades will first be computed according to the following percentages.
 

Computer Problem

10%

  
 

Homework

20%

  
 

Exam I

20%

  
 

Exam II

20%

  
 

Final Exam

30%

  

Homework Policy: Homework will be due on mondays. Solutions will be discussed in the lecture (time permiting) after the homework is collected. Late homework will be accepted up to two weeks after the class in which it is due or up to the last day of classes whichever is earlier. Homework will count 20% of your final grade. Penalty will be 33% for each week late. Penalty for one week late takes effect immediately following class in which it is due. After two weeks NO credit will be given.

Examinations: There will be two one-hour exams and a final exam. They will count 20%, 20% and 30% of your final grade, respectively. For each hourly exam you are permitted one "cheat sheet" comprised of an 8½ ´ 11 sheet of paper which must be handwritten. For the final exam, you are permitted two "cheat sheets."

Honor System: This course is conducted in accordance with the Department of Electrical Engineering Honor System. The EE Honors System applies to students enrolled in EE courses. Copies of the EE Honor System are available in the EE Main Office, 205 Dreese.